Published 1976
| Version v1
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Quenching and recovery experiments on tungsten
Description
A short summary is given of new results concerning transmission electron microscopy and resistivity measurements on quenched tungsten. These results give evidence for the first time that the quenching and annealing of high purity tungsten leads to vacancy--defect clustering resulting in small voids observable in the electron microscope. 21 references
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MF available from INIS under the Report Number; Available from NTIS. $3.50.
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Additional details
Additional titles
- Augmented title (English)
- Review
Publishing Information
- Imprint Pagination
- 8 p.
- Report number
- CONF-761027--16
Conference
- Title
- International conference on properties on atomic defects on metals.
- Dates
- 18 - 22 Oct 1976.
- Place
- Argonne, Illinois, United States of America (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 8327736
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; QUENCHING; REVIEWS; TUNGSTEN; VOIDS
- Descriptors DEC
- DOCUMENT TYPES; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; METALS; PHYSICAL PROPERTIES; TRANSITION ELEMENTS