Thickness controlling bandgap energy, refractive index and electrical conduction mechanism of 2D tungsten diselenide (WSe) thin films for photovoltaic applications
- 1. Department of Physics, College of Science, Jouf University, 2014, Sakaka (Saudi Arabia)
- 2. Physics department, Faculty of Science, Al-Azhar University, 71452, Assuit (Egypt)
- 3. Physics Department, Faculty of Science, Helwan University, 4034572, Helwan, Cairo (Egypt)
Description
This paper reports thickness-dependent structural, morphological, optical, and electrical conduction mechanism of room temperature electron beam evaporated 2D WSe thin films on glass substrate. The thickness of the WSe films was varied from 100 to 400 nm. XRD results showed the fact that the WSe films are crystallized in a hexagonal structure. The nanostructure nature is verified from morphological studies. It was found that the microstrain decreases, while the crystallite size rises as the thickness of WSe film increases. The thickness-dependent optical constants and energy bandgap was studied using spectroscopic ellipsometry (SE). The refractive index and extinction coefficient dispersion curves of WSe film with various thicknesses display two strong absorption peaks A and B below 800 nm at 580 nm and 770 nm, which are belong to excitonic absorption features. Further, the results illustrate that the optical constants and optical bandgap of thin WSe films are strongly correlated with the film thickness. In addition, the electrical conduction mechanism in different temperature regimes is explained in terms of Arrhenius activated thermal conduction, Mott's variable-range hopping (VRH), and Seto's grain boundary effect models. The most interesting finding is that the film exhibits wide absorption coefficient (10 cm$^{-1}) and energy gap value closely matches the solar spectrum, making it an excellent candidate for photovoltaic materials as an absorber layer.
Availability note (English)
Available from: http://dx.doi.org/10.1007/s00339-021-05188-zAdditional details
Identifiers
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing (Print)
- Journal Volume
- 128
- Journal Issue
- 2
- Journal Page Range
- vp.
- ISSN
- 0947-8396
- CODEN
- APAMFC
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 53040395
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRON BEAMS; ELECTRON TEMPERATURE; ELLIPSOMETRY; ENERGY GAP; GLASS; GRAIN BOUNDARIES; NANOSTRUCTURES; REFRACTIVE INDEX; SOLAR CELLS; SUBSTRATES; THERMAL CONDUCTION; THICKNESS; THIN FILMS; TUNGSTEN; X-RAY DIFFRACTION
- Descriptors DEC
- BEAMS; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELEMENTS; ENERGY TRANSFER; EQUIPMENT; FILMS; HEAT TRANSFER; LEPTON BEAMS; MEASURING METHODS; METALS; MICROSTRUCTURE; OPTICAL PROPERTIES; PARTICLE BEAMS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; REFRACTORY METALS; SCATTERING; SOLAR EQUIPMENT; TRANSITION ELEMENTS
Optional Information
- Notes
- AID: 94