Creation of nanoparticles and luminescence in Al2O3 crystal by Zn ion implantation

Single crystal α-Al2O3 wafers were implanted with 45 keV Zn ions up to a fluence of 1x1017 ions/cm2, and were then subjected to furnace annealing in oxygen atmosphere at different temperatures. Various techniques have been applied to study the creation of nanoparticles (NPs), defects and their thermal evolutions, as well as their effects on optical properties of Al2O3. Our results clearly show that Zn NPs have been synthesized in the as-implanted sample and they begin to be oxidized at 500 deg. C. Two broad photoluminescence bands appear in the Zn ion-implanted samples and their intensities depend on the annealing temperatures. The results have been interpreted in view of creation of the defects and NPs, Zn atoms diffusion as well as their thermal evolution during annealing. - Highlights: → Zn and ZnO NPs emended in Al2O3 are reached. → Optical properties of Al2O3 have been enhanced significantly. → Overlapping of the emissions induced by defects in Al2O3 structure and ZnO NPs.