Published June 15, 1984
| Version v1
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Study of the behavior of oxygen in silicon and in silicon oxide under bombardment by electrons of some keV
Description
The consequences of electron irradiation of some keV of silicon and silicon oxide are examined using surface analysis methods. The aim of this work is to study the implications of these irradiation damages on the spectrometry results of secondary ions and spectrometry of Auger electrons. Surface diffusion of adsorbed contaminants is identified as the disruptive element of in-depth oxygen analyses. It is shown that electronic excitation mobilizes oxygen in silicon which can then either de-sorb or diffuse into the material. In silicon oxide, these phenomena result in a modification of the electronic structure that is explained. (author)
Abstract (French)
Les consequences de l'irradiation par des electrons de quelques keV du silicium et de l'oxyde de silicium sont examinees a l'aide de methodes d'analyse de surface. Le but de ce travail est d'etudier les implications de ces degats d'irradiation sur les resultats de spectrometrie des ions secondaires et de spectrometrie des electrons Auger. La diffusion de surface des contaminants adsorbes est identifee comme l'element perturbateur des analyses d'oxygene en profondeur. Il est montre que l'excitation electronique mobilise l'oxygene dans le silicium qui peut alors, soit desorber, soit diffuser dans le materiau. Dans l'oxyde de silicium, ces phenomenes se traduisent par une modification de la structure electronique qui est explicitee. (auteur)Files
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Additional details
Additional titles
- Original title (French)
- Etude du comportement de l'oxygene dans le silicium et dans l'oxyde de silicium sous bombardement par des electrons de quelques keV
Publishing Information
- Imprint Pagination
- 192 p.
- Report number
- FRCEA-TH--12258
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 51124248
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- AUGER EFFECT; CHEMICAL ANALYSIS; DESORPTION; ELECTRON BEAMS; ELECTRON REACTIONS; ELECTRON SPECTROSCOPY; ELECTRONIC STRUCTURE; IONIC COMPOSITION; KEV RANGE 01-10; OXYGEN; PHYSICAL RADIATION EFFECTS; SILICON; SILICON OXIDES; SURFACE AREA
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED-PARTICLE REACTIONS; ELEMENTS; ENERGY RANGE; KEV RANGE; LEPTON BEAMS; LEPTON REACTIONS; NONMETALS; NUCLEAR REACTIONS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; SEMIMETALS; SILICON COMPOUNDS; SORPTION; SPECTROSCOPY; SURFACE PROPERTIES
Optional Information
- Notes
- 128 refs.; Available from the INIS Liaison Officer for France, see the INIS website for current contact and E-mail addresses