Radiation-induced diffusion of gold on silicon surface

The radiation-induced surface diffusion (RISD) of gold on silicon is studied. Silicon monocrystal of n-type with a specific resistance of rho approximately 0.02 w and dislocation density appr. 107 m-2 was chosen for the study. T e diffusion was carried out on three surface planes (100), (110), (111). The diffusion was studied in three regimes: a) at approximately 900 K, b) at approximately 330 K plus irradiation, c) at approximately 900 K. The diffusion rate was evaluated by a shift of gold film boundary under fixed experimental conditions. A conclusion was drawn from the results obtained, that a decisive role in radiation-induced sUrface diffusion played chemical bonds of a diffUsant with adjacent atoms of silicon crystal