Published February 2011 | Version v1
Journal article

Negative capacitance in doped bi-layer organic light-emitting devices

  • 1. Surface Physics Laboratory (National Key Laboratory), Fudan University Shanghai 200433 (China)

Description

This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/20/2/027306

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
20
Journal Issue
2
Journal Page Range
[6 p.]
ISSN
1674-1056