Published February 2011
| Version v1
Journal article
Negative capacitance in doped bi-layer organic light-emitting devices
- 1. Surface Physics Laboratory (National Key Laboratory), Fudan University Shanghai 200433 (China)
Description
This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/20/2/027306Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 20
- Journal Issue
- 2
- Journal Page Range
- [6 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45013161
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALTERNATING CURRENT; CAPACITANCE; DOPED MATERIALS; ELECTRIC POTENTIAL; EMISSION SPECTRA; FREQUENCY DEPENDENCE; INDUCTANCE; LAYERS; LIGHT EMITTING DIODES; VISIBLE RADIATION
- Descriptors DEC
- CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; MATERIALS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTRA