Effect of electric-field on spin transport and spin current in an organic semiconductor system
Creators
- 1. College of Science, North China University of Technology, 100041 Beijing (China)
- 2. College of Materials Science and Engineering, Beijing University of Technology, 100022 Beijing (China)
Description
We use the two-component drift-diffusion model to study the spin density polarization in an organic semiconductor system under an external electric-field. The spin-dependent electrical-conductivity, the drift spin current and the diffusion spin current in the organic semiconductor are self-consistently derived. It is found that the spin current could be strongly influenced by the spin-dependent electrical-conductivity. When the spin-dependent conductivity varies from 0 to 0.5%, the spin current presents a very pronounced change almost three orders in magnitude. The electric-field could effectively enhance the spin-dependent electrical-conductivity and the spin current. Furthermore, the spin-dependent electrical-conductivity is position sensitive, but its position sensitivity goes down while electric-field is larger than about 1 mV/μm
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physleta.2008.08.040Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2008.08.040;
- PII
- S0375-9601(08)01278-4;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 372
- Journal Issue
- 42
- Journal Page Range
- p. 6434-6437
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40049825
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CURRENTS; DENSITY; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ORGANIC SEMICONDUCTORS; POLARIZATION; SENSITIVITY; SIMULATION; SPIN; SPIN ORIENTATION
- Descriptors DEC
- ANGULAR MOMENTUM; ELECTRICAL PROPERTIES; MATERIALS; ORIENTATION; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.