On-line sheet conductivity measurements during ion bombardment of ion-doped silicon layers

Abstract A method with which the sheet conductivity can be measured continuously during and after ion bombardment of ion doped silicon layers is described in detail. The temperature dependence of the damage created by 30 keV p31 ions in silicon doped with phosphorus has been studied between −186°C and 102°C. It is found that the conductivity during the bombardment decreases almost exponentially with the ion dose. The annealing behaviour of the created defects has been studied isothermally at the bombardment temperature and isochronally up to 600°C. The results obtained are compared with measurements on neutron irradiated silicon.