Published March 1991
| Version v1
Journal article
Investigation of amphoteric behavior of silicon implanted into InP
- 1. Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Metallurgy
Description
The electrical properties and characteristics of photoluminescence (PL) at 11K for InP implanted with Si+ at 200 deg C have studied. It has been found that the sheet electron concentration in Si+ simply implanted sample tends to a saturation level with increasing the Si+ dose, while that in Si+ + P+ dually implanted sample increases greatly. The 11k PL spectra reveals that there exists SiP-VP complex in Si+ implanted InP, which can be inhibited by co-implanting P+. The mechanism of improved electrical properties by Si+ + P+ dual implants is also discussed
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 40
- Journal Issue
- 3
- Series
- Acta Phys. Sin.
- Journal Page Range
- 476-482
- ISSN
- 1000-3290
- CODEN
- WLHPA
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 23033597
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CARRIER DENSITY; ELECTRICAL PROPERTIES; INDIUM PHOSPHIDES; ION IMPLANTATION; MOBILITY; PHOSPHORUS IONS; PHOTOLUMINESCENCE; RADIATION DOSES; SILICON IONS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHARGED PARTICLES; EMISSION; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; LUMINESCENCE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES