Drain current model for strained-Si/Si1−xGex/strained-Si double-gate MOSFETs including quantum effects

In this paper, we present an accurate semi-analytical model for the I−V characteristics of nanoscale double-gate (DG) strained nMOSFETs. The structure makes use of two strained-silicon (S-Si) channels for current flow on both sides of a middle Si1−xGex layer. Taking carrier confinement effect into account, we have developed an efficient yet exact model for the inversion charge sheet density in the channel. The model is utilized for predicting the threshold voltage. In addition, it is used to find the drain current of the device for all regions of operation. Additionally, the channel length modulation in the device has been investigated and a model for the length of velocity saturation region is introduced, which enables the model to be applied to short channel devices. To assess the accuracy of the proposed model, the results of the model are compared to those of the numerical simulations and found to be accurately predicting the simulation results