Published March 16, 2023 | Version v1
Miscellaneous Metadata-only

Molecular beam epitaxy and characterization of InAs-AlAsSb core-shell nanowires

Creators

Description

In the present work the growth of InAs-AlAsSb core-shell nanowires with ultrathin InAs core via molecular beam epitaxy on silicon is introduced. High yield and high aspect ratio InAs nanowires with diameters below 30 nm are presented. Further, the epitaxial overgrowth with AlAsSb including As fraction tunability is established. Finally, PL studies show a wide range of tunabilily for the InAs core emission.

Availability note (English)

Available from: https://mediatum.ub.tum.de/?id=1690551

Additional details

Identifiers

URL
https://mediatum.ub.tum.de/?id=1690551;

Publishing Information

ISBN
978-3-946379-47-8
Imprint Pagination
183 p.
Journal Volume
247
Series
Selected topics of semiconductor physics and technology

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
55022345
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Thesis, Non-conventional Literature
Descriptors DEI
ASPECT RATIO; EMISSION; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NANOWIRES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DIMENSIONLESS NUMBERS; EPITAXY; INDIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES