Published June 1, 2016 | Version v1
Journal article

Oxygen self-diffusion in ThO2 under pressure: connecting point defect parameters with bulk properties

  • 1. Materials Science and Technology Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States)
  • 2. Faculty of Engineering, Environment and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom)
  • 3. Department of Nuclear Engineering, Purdue University, West Lafayette, IN 47907 (United States)

Description

ThO2 is a candidate material for use in nuclear fuel applications and as such it is important to investigate its materials properties over a range of temperatures and pressures. In the present study molecular dynamics calculations are used to calculate elastic and expansivity data. These are used in the framework of a thermodynamic model, the cBΩ model, to calculate the oxygen self-diffusion coefficient in ThO2 over a range of pressures (−10–10 GPa) and temperatures (300–1900 K). Increasing the hydrostatic pressure leads to a significant reduction in oxygen self-diffusion. Conversely, negative hydrostatic pressure significantly enhances oxygen self-diffusion. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/3/6/065501

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
3
Journal Issue
6
Journal Page Range
[7 p.]
ISSN
2053-1591