Published January 7, 2005 | Version v1
Journal article

Semi-localized transitions model for thermoluminescence

  • 1. Institute of Physics, Jan Dlugosz University, ul. Armii Krajowej 13/15, PL-42-200 Czstochowa (Poland)

Description

A new model for thermoluminescence (TL) kinetics is presented, which is a natural generalization of the standard localized transition model. The model of semi-localized transitions (SLTs) allows trapped charge carriers to be excited to the conduction band. Analytic equations for SLTs are constructed using an enumeration technique which transforms concentrations of carriers to concentrations of states of localized trap-recombination centre pairs. Solving numerically the set of equations, we demonstrate some basic features of the SLT model. It is shown that SLT is able to produce so-called TL displacement peaks that were previously found in one-dimensional TL simulations

Availability note (English)

Available online at http://stacks.iop.org/0022-3727/38/17/d5_1_004.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
38
Journal Issue
1
Journal Page Range
p. 17-21
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36037137
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHARGE CARRIERS; COMPUTERIZED SIMULATION; EQUATIONS; EXCITATION; KINETICS; ONE-DIMENSIONAL CALCULATIONS; RECOMBINATION; THERMOLUMINESCENCE; TRAPPING; TRAPS
Descriptors DEC
EMISSION; ENERGY-LEVEL TRANSITIONS; LUMINESCENCE; PHOTON EMISSION; SIMULATION