Published August 1980
| Version v1
Journal article
Fabrication of high resistant near-surface layer in silicon irradiated by electrons at high temperature
- 1. Novosibirskij Gosudarstvennyj Univ. (USSR)
- 2. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Образование высокоомного приповерхностного слоя в кремнии, облученном электронами при повышенных температурах
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 14
- Journal Issue
- 8
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1659
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 12578884
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRONS; ENERGY LEVELS; HIGH TEMPERATURE; LAYERS; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON; SURFACES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HEAT TREATMENTS; LEPTONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Deposited article; for English translation see the journal Soviet Physics - Semiconductors (USA).