Realization of p-n junction solar cells by an ion implantation doping procedure

The possibility of using a low cost ion implantation procedure for the preparation of junction solar cells has been investigated. The method employs a d.c. glow discharge ion source and a short post acceleration structure, without any mass separation. Preparation of the cells in a continuous way is possible at competitive speeds since the ion beam current density reaches 1 mA/cm2. The properties of silicon cells, obtained by discharge bombardment in BF3 or PF5 atmosphere followed by recristallisation of the damaged layer either by thermal annealing or fast surface laser pulses, have been investigated. Rutherford backscattering, SIMS, electrical measurements have been used. Finally, characteristics and performance of the devices are presented