Study of the behavior of commercial CCDs images sensors in a space environment
Description
We studied the behavior of CCD images sensors exposed to a spatial radiative constraint. The aim of this work is to compare the degradation of the sensitive parameters between commercial components and hardened ones. It appears that the dark current density of commercial CCDs is sensitive to total dose. This parameter is the main source of degradation for dose levels up to 200 Gy(Si). The induced oxide charge is the prime responsible for this behavior as shown by the partial annealing of the dark current under 100 C heating. It is shown that this charge deposited in isolation oxides induces an inversion zone at the semiconductor surface leading to the creation of a parasitic transistor. Numerical simulations show the thermal activation of the leakage currents due to this structure, and confirm the experimental observations. The irradiation of CCD with particles generating bulk defaults like protons and neutrons leads to the observation of a dark current increase induced by the contribution of elastic (for protons) and inelastic interactions between incident particles and semiconductor atoms. The associated total dose deposition (proton) provides an additional contribution to the mean degradation. The occurrence of pixels with a large RTS and the increase of the charge transfer inefficiency (CTI) can also be noticed. In a hardness assurance context, this work provides a better understanding of the critical points, which have to be taken into account in order to propose a good estimation of the CCD degradation for a spatial application. We should keep in mind the predominant role of leakage currents that directly affect the measurement of the conversion factor or the CTI. This behavior differs from the one observed with hardened CCDs. The characterization of commercial sensors under total dose is proving to be mandatory, as well as the estimation of the number of pixels with a large dark current and the probability of RTS occurrence in case of non ionising effects. (author)
Abstract (French)
Nous avons etudie le comportement de capteurs d'images CCD commerciaux sous contrainte radiative spatiale. L'objectif est de comparer la degradation des parametres sensibles de ces composants a celle observee sur des CCD durcis. II apparait que la densite de courant d'obscurite des CCD commerciaux est sensible a la dose cumulee. Pour des doses jusqu'a 200 Gy(Si), il s'agit meme de la principale source de degradation des capteurs. La charge d'oxyde est en grande partie responsable de ce comportement, comme le montre la guerison partielle du courant d'obscurite lors d'un recuit a 100C. II est montre que cette charge agit principalement dans les oxydes d'isolation, en mettant la surface du semiconducteur en inversion, constituant ainsi un transistor parasite. L'activation thermique de ces courants de fuite est mise en evidence par des simulations numeriques, rejoignant ainsi les observations experimentales. L'evolution du courant d'obscurite apres exposition a des particules responsables de la creation de defauts (protons et neutrons) est bien expliquee par les contributions des interactions elastiques (aux protons) et inelastiques: La dose cumulee aux protons apporte une contribution supplementaire a la degradation moyenne. Notons egalement l'apparition de pixels presentant un fort signal RTS et l'augmentation de l'inefficacite de transfert. Dans un contexte d'assurance durcissement, ce travail permet de mieux apprehender les points importants pour une bonne estimation de la degradation en vue d'une utilisation spatiale. On retiendra en particulier le role predominant des courants de fuite, qui perturbent directement l'estimation des autres parametres critiques des CCD, comme le facteur de conversion ou l'inefficacite de transfert. Ce comportement se distingue des CCD durcis. Une caracterisation en dose cumulee des capteurs commerciaux s'avere indispensable, ainsi que l'estimation du nombre de pixels fortement degrades et du risque de RTS lors d'effets non ionisantsFiles
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Additional details
Additional titles
- Original title (French)
- Etude du comportement des capteurs d'images CCD commerciaux en ambiance spatiale
Identifiers
Publishing Information
- Imprint Pagination
- 131 p.
- Report number
- FRNC-TH--9804
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 48078419
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- COMPUTERIZED SIMULATION; DOSE RATES; HARDNESS; LEAKAGE CURRENT; SENSORS; TRANSISTORS
- Descriptors DEC
- CURRENTS; ELECTRIC CURRENTS; MECHANICAL PROPERTIES; SEMICONDUCTOR DEVICES; SIMULATION
Optional Information
- Notes
- 60 refs.; Available from the INIS Liaison Officer for France, see the 'INIS contacts' section of the INIS-NKM website for current contact and E-mail addresses: http://www.iaea.org/inis/Contacts/