Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films

3C-SiC epitaxial layers were grown by sublimation epitaxy in a vacuum on the (0001)C face of 6H-SiC substrates produced by the Lely method and 4H-SiC substrates grown by modified Lely method. An analysis of these layers demonstrated the high structural perfection of the epitaxial layers and absence of any transition regions between 3C-SiC epitaxial layer and substrate. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection.