De Haas–van Alphen effect in GdAs

We have for the first time observed de Haas–van Alphen effect in GdAs below the Néel temperature in magnetic fields up to 15 T. The Fermi surface consists of three ellipsoidal electron surfaces and a spherical surface. We have also determined the corresponding effective masses and mean free paths. Furthermore, by analyzing the angular dependence of Fermi surface, the number of carriers belonging to each Fermi surface is estimated. It is consistent with that measured by the Hall effect. In GdX as the lattice constant is increased, the number of carriers decreases. On the other hand, however, GdAs has less carrier concentration compared to that of GdSb.