Published August 1992
| Version v1
Journal article
Synthesis and properties of highly C-axis oriented PbTiO3 thin films prepared by an MOCVD method
- 1. Inst. for Materials Research, Tohoku Univ., Sendai (Japan)
- 2. Kawasaki Technical Lab., Asahi Chemical Industry Co., Ltd. (Japan)
Description
Thin films of PbTiO3 were prepared on MgO(100) substrates by chemical vapor deposition using Pb(C2H5)4 (PbEt) and Ti(OC3H7)4 (TTIP) as sources. With decreasing Pb/Ti molar ratio from 1.2 to 1 the degree of c-axis orientation increased. Highly c-axis oriented PbTiO3 thin films were epitaxially grown at 500degC and 2 kPa. The films were transparent and had a refractive index (n) of 2.64 at 632.8 nm which was about 2% lower than that of a single PbTiO3 crystal (n≅2.7). The films prepared on (100)-oriented Pt electrodes deposited on MgO(100) substrates at 600degC and 2 kPa also showed a prominent c-axis orientation and had a dielectric constant of 90. (orig.)
Additional details
Publishing Information
- Journal Title
- Journal de Physique. 3
- Journal Volume
- 2
- Journal Issue
- 8
- Journal Page Range
- p. 1439-1444.
- ISSN
- 1155-4320
- CODEN
- JPAIEU
Conference
- Title
- Chemical vapour deposition - process and principles.
- Acronym
- 8. European conference and exhibition on chemical powder deposition (EUROCVD-8)
- Dates
- 9-13 Sep 1991.
- Place
- Glasgow (United Kingdom).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 24005349
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES; EPITAXY; FILMS; ORIENTATION; PERMITTIVITY; REFRACTION; SUBSTRATES; SYNTHESIS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TITANATES
- Descriptors DEC
- CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; ELECTRICAL PROPERTIES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SURFACE COATING; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS