Published February 2010 | Version v1
Book

Development of 'XRFET' dosimeters for integrated ionizing radiation measurements

  • 1. Electronics Division, Bhabha Atomic Research Centre, Mumbai (India)
  • 2. Electrical Engineering Department, Indian Institute of Technology Bombay, Mumbai (India)

Description

Radiation sensitive 'XRFET' dosimeters have been developed for integrated ionizing radiation measurements. The fabrication of these devices has been carried out by developing a 'radiation-soft' CMOS process using the CMOS foundry of SITAR, Bangalore. An overview of this R and D and the results showing the performance of dosimeters are presented in this paper. (author)

Part of:
Proceedings of DAE-BRNS national symposium on nuclear instrumentation - 2010

Additional details

Publishing Information

Publisher
Dept. of Atomic Energy
Imprint Place
Mumbai (India)
ISBN
81-88513-33-4
Imprint Title
Proceedings of DAE-BRNS national symposium on nuclear instrumentation - 2010
Imprint Pagination
679 p.
Journal Page Range
p. 277-280

Conference

Title
national symposium on nuclear instrumentation
Acronym
NSNI 2010
Dates
24-26 Feb 2010
Place
Mumbai (India)

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
41082256
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DOSEMETERS; GAMMA RADIATION; MOSFET; PERFORMANCE TESTING; RADIATION DOSES; SPECIFICATIONS
Descriptors DEC
DOSES; ELECTROMAGNETIC RADIATION; FIELD EFFECT TRANSISTORS; IONIZING RADIATIONS; MEASURING INSTRUMENTS; MOS TRANSISTORS; RADIATIONS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS

Optional Information

Notes
2 refs., 9 figs.