Analysis of the radiation damage of semiconductor devices with different pulse width

Transient radiation response of CMOS circuits were studied for different pulse widths by experiments and two-dimensional device simulations. The experimental results are in relatively good agreement with the simulation. The data clearly indicate the dose-rate dependency on the pulse widths. The damage thresholds decrease with increased pulse widths. The damage thresholds of semiconductor devices with different pulse width were also analysed on the basis of three transient radiation damage mechanisms. The failure threshold vs. pulse width was given in this paper. (authors)