Fast self-trapping of light in photorefractive semiconductors

The paper presents an analysis of fast self-trapping of light as part of high-intensity pulse propagation in photorefractive gallium arsenide. Temporal evolution of picosecond pulses has been analysed for various material parameter values, using numerical techniques which take into consideration bipolar carrier transport and the hot-electron effect. A strong laser beam self-bending effect, which can be used for switching optical signals, has been demonstrated, and the conditions of its occurrence have been discussed. (paper)