Published January 29, 2001 | Version v1
Journal article

Structure and property characterization of low-k dielectric porous thin films determined by x-ray reflectivity and small-angle neutron scattering

  • 1. Polymers Division, Electronics Materials Group, National Institute of Standards and Technology, 100 Bureau Drive, Stop 8541 Gaithersburg, Maryland 20899-8541 (United States)

Description

A novel methodology using a combination of high energy ion scattering, x-ray reflectivity, and small angle neutron scattering is developed to characterize the structure and properties of porous thin films for use as low-k dielectric materials. Ion scattering is used to determine the elemental composition of the film. X-ray reflectivity is used to measure the average electron density, film thickness, and electron density depth profile. Small angle neutron scattering is used to determine the pore structure and pore connectivity. Combining information from all three techniques, the film porosity and matrix material density can be uniquely determined

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
550
Journal Issue
1
Journal Page Range
p. 453-457
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
IEEE international conference on characterization and metrology for ULSI technology
Dates
26-29 Jun 2000
Place
Gaithersburg, MD (United States)

Optional Information

Notes
(c) 2001 American Institute of Physics.