Published June 1997
| Version v1
Journal article
Oxygen surface diffusion in three-dimensional Cu2O growth on Cu(001) thin films
Creators
- 1. Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Description
By studying the growth of Cu2O islands during the initial oxidation stage of Cu(001) with in situ transmission electron microscopy, it is found that the dominant mechanism for the growth of three-dimensional islands is surface diffusion of oxygen. However, there exists a non-negligible contribution to the metal oxide growth by another mechanism, probably direct impingement of the oxygen atoms on the oxide island. These results demonstrate the importance of surface conditions in oxidation. copyright 1997 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 70
- Journal Issue
- 26
- Journal Page Range
- p. 3522-3524
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30006164
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COPPER; COPPER COMPOUNDS; DIFFUSION; OXIDATION; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CHEMICAL REACTIONS; ELECTRON MICROSCOPY; ELEMENTS; FILMS; METALS; MICROSCOPY; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS