Published October 1, 2009 | Version v1
Journal article

Comparison of the chemical composition of boron-doped diamond surfaces upon different oxidation processes

  • 1. School of Materials Science and Engineering, Shandong University, 73 Jingshi Road, Jinan, Shandong Province (China)
  • 2. Institut de Recherche Interdisciplinaire (IRI, USR CNRS-3078) and Institut d'Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare, B.P. 60069, 59652 Villeneuve d'Ascq (France)
  • 3. Institut Lavoisier de Versailles, UMR 8180, Universite de Versailles-St-Quentin en Yvelines, 45 avenue des Etats Unis, 78000 Versailles (France)

Description

In spite of the high stability of polycrystalline diamond, oxidation of the hydrogenated surface is relatively easy to perform. This results in the introduction of ether (C-O-C), carbonyl (C=O) and hydroxyl (C-OH) groups on the surface. For further surface functionalization, it is important to quantify the presence of each group on the diamond surface when different oxidation processes are used. In this paper, we investigate the composition of oxidized boron-doped diamond surfaces using X-ray photoelectron spectroscopy (XPS) when electrochemical, photochemical or oxygen plasma methods were employed to introduce oxygen functionalities on as-deposited diamond interfaces. Cyclic voltammetry and C-V measurements were additionally performed to identify more clearly the formation of C-OH, C-O-C and/or C=O functions.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.electacta.2009.05.037

Additional details

Identifiers

DOI
10.1016/j.electacta.2009.05.037;
PII
S0013-4686(09)00686-0;

Publishing Information

Journal Title
Electrochimica Acta
Journal Volume
54
Journal Issue
24
Journal Page Range
p. 5818-5824
ISSN
0013-4686
CODEN
ELCAAV

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.