Published June 1, 2013
| Version v1
Journal article
Interconnects for nanoscale MOSFET technology: a review
Description
In this paper, a review of Cu/low-k, carbon nanotube (CNT), graphene nanoribbon (GNR) and optical based interconnect technologies has been done. Interconnect models, challenges and solutions have also been discussed. Of all the four technologies, CNT interconnects satisfy most of the challenges and they are most suited for nanometer scale technologies, despite some minor drawbacks. It is concluded that beyond 32 nm technology, a paradigm shift in the interconnect material is required as Cu/low-k interconnects are approaching fundamental limits. (semiconductor technology)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/34/6/066001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 34
- Journal Issue
- 6
- Journal Page Range
- [8 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44119834
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CARBON NANOTUBES; GRAPHENE; MOSFET; REVIEWS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CARBON; DOCUMENT TYPES; ELEMENTS; FIELD EFFECT TRANSISTORS; MATERIALS; MOS TRANSISTORS; NANOSTRUCTURES; NANOTUBES; NONMETALS; SEMICONDUCTOR DEVICES; TRANSISTORS