Published June 1, 2013 | Version v1
Journal article

Interconnects for nanoscale MOSFET technology: a review

Creators

  • 1. UIET, Panjab University, Chandigarh (India)

Description

In this paper, a review of Cu/low-k, carbon nanotube (CNT), graphene nanoribbon (GNR) and optical based interconnect technologies has been done. Interconnect models, challenges and solutions have also been discussed. Of all the four technologies, CNT interconnects satisfy most of the challenges and they are most suited for nanometer scale technologies, despite some minor drawbacks. It is concluded that beyond 32 nm technology, a paradigm shift in the interconnect material is required as Cu/low-k interconnects are approaching fundamental limits. (semiconductor technology)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/34/6/066001

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
34
Journal Issue
6
Journal Page Range
[8 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44119834
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CARBON NANOTUBES; GRAPHENE; MOSFET; REVIEWS; SEMICONDUCTOR MATERIALS
Descriptors DEC
CARBON; DOCUMENT TYPES; ELEMENTS; FIELD EFFECT TRANSISTORS; MATERIALS; MOS TRANSISTORS; NANOSTRUCTURES; NANOTUBES; NONMETALS; SEMICONDUCTOR DEVICES; TRANSISTORS