Ge–Si and Si–Ge core–shell nanocrystals: Theoretical study
Creators
Description
The electronic and optical properties of Ge−Si and Si−Ge core–shell nanocrystals (NCs) were investigated using pure and time-dependent density functional theory calculations. The Si and Ge NCs with diameter of about 2 nm are considered for constructing of the Ge−Si and Si−Ge core–shell NCs, respectively. The dependency of the optical and electronic properties of Ge−Si and Si−Ge core–shell NCs was studied with defined structural parameters as the ratio of the core radius (R1) to the NC radius (R2). It is found that the single particle energy gap, optical gap and exciton binding energy of the different core–shell NCs are strongly dependent on the structural parameter of R1 / R2. It is shown that the energy gap, optical gap and lowest exciton binding energy of the both core–shell NCs can be modulated with structural parameter variations. The results presented in this work can be used for development and tuning of the electronic and optoelectronic properties of nanodevices based on Si and Ge core–shell NCs. - Highlights: • Optical properties of Ge−Si and Si−Ge core–shell nanocrystals were investigated. • Optical properties of the core–shell NCs were studied with core radius changes. • The exciton binding energy and HOMO–LUMO gap of the core shells were discussed
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2015.05.009Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2015.05.009;
- PII
- S0040-6090(15)00543-X;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 589
- Journal Page Range
- p. 120-124
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47033447
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BINDING ENERGY; DENSITY FUNCTIONAL METHOD; ENERGY GAP; GERMANIUM COMPOUNDS; NANOSTRUCTURES; OPTICAL PROPERTIES; SILICON COMPOUNDS; SIMULATION; TIME DEPENDENCE
- Descriptors DEC
- CALCULATION METHODS; ENERGY; PHYSICAL PROPERTIES; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.