Published June 1, 2016
| Version v1
Journal article
Advances and prospects in nitrides based light-emitting-diodes
- 1. Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Description
Due to their low power consumption, long lifetime and high efficiency, nitrides based white light-emitting-diodes (LEDs) have long been considered to be a promising technology for next generation illumination. In this work, we provide a brief review of the development of GaN based LEDs. Some pioneering and significant experiment results of our group and the overview of the recent progress in this field are presented. We hope it can provide some meaningful information for the development of high efficiency GaN based LEDs and solid-state-lighting. (review)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/37/6/061001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 37
- Journal Issue
- 6
- Journal Page Range
- [14 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49094784
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EFFICIENCY; EXPERIMENT RESULTS; GALLIUM NITRIDES; ILLUMINANCE; LIFETIME; LIGHT EMITTING DIODES; REVIEWS; SOLIDS
- Descriptors DEC
- DOCUMENT TYPES; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES