Published June 1, 2016 | Version v1
Journal article

Advances and prospects in nitrides based light-emitting-diodes

  • 1. Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Description

Due to their low power consumption, long lifetime and high efficiency, nitrides based white light-emitting-diodes (LEDs) have long been considered to be a promising technology for next generation illumination. In this work, we provide a brief review of the development of GaN based LEDs. Some pioneering and significant experiment results of our group and the overview of the recent progress in this field are presented. We hope it can provide some meaningful information for the development of high efficiency GaN based LEDs and solid-state-lighting. (review)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/37/6/061001

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
37
Journal Issue
6
Journal Page Range
[14 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49094784
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
EFFICIENCY; EXPERIMENT RESULTS; GALLIUM NITRIDES; ILLUMINANCE; LIFETIME; LIGHT EMITTING DIODES; REVIEWS; SOLIDS
Descriptors DEC
DOCUMENT TYPES; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES