Published 1981 | Version v1
Book Metadata-only

Picosecond laser annealing of silicon

Creators

  • 1. Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany, F.R.)
  • 2. Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany, F.R.)
  • 3. Siemens A.G., Muenchen (Germany, F.R.). Forschungslaboratorien

Description

We review the existing literature and present new results on the regrowth of silicon surfaces, either virgin or amorphized by ion-implantation, following irradiation by picosecond laser pulses. The importance of melt depth, quench rate and the nature of the initial a-Si surface as revealed by cross-section TEM are emphasized in order to explain the unique halo patterns observed optically. (author)

Additional details

Publishing Information

Publisher
Institute of Physics.
Imprint Place
Bristol (UK)
ISBN
0 85498 151 9
Imprint Title
Microscopy of semiconducting materials, 1981
Imprint Pagination
464 p.
Journal Page Range
p. 85-94.

Conference

Title
Royal Microscopical Society Conference on microscopy of semiconducting materials.
Dates
6 - 10 Apr 1981.
Place
Oxford (UK).

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
14734722
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; ANNEALING; CRYSTAL GROWTH; CRYSTAL-PHASE TRANSFORMATIONS; ELECTRON MICROSCOPY; ION IMPLANTATION; LASER RADIATION; MELTING; MICROSTRUCTURE; OPTICAL MICROSCOPY; PHYSICAL RADIATION EFFECTS; PULSES; QUENCHING; RECRYSTALLIZATION; REVIEWS; SILICON; SURFACES
Descriptors DEC
CRYSTAL STRUCTURE; DOCUMENT TYPES; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; MICROSCOPY; PHASE TRANSFORMATIONS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS