Modification of InAs optical properties under pulsed laser irradiation

Edge photoluminescence of indium arsenide subjcted to pulsed laser irradiation (PLI) and its reflection spectra in the range of one-phonon resonance (40-50μm) are investigated. During PLI effect on crystal surface appearance of high reflection phase with time resolution of 5ns. was controlled. As a result of increase of PLI power decrease of photoluminescence intensity was traced, therewith the line form and maximum position were constant. After passing the melting point (0.13J/cm2) shift of resonance maximum and line broadening were observed. The detected effects are caused mainly by the processes in thin surface layer. A noticeable growth of reflection factor is due to the surface metallization. Redistribution of electron density in the vicinity of defects results in decrease of dynamical coefficients of atomic bonds and in increase ofdamping parameter. Modification of optical properties of InAs surface layer occurs near the absorption boundary that is reflected in photoluminescence spectra