Published December 16, 1983
| Version v1
Journal article
Switching effect based on the N-shaped negative differential resistance in n-CdCr2Se4 single crystals
- 1. AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki
Description
N-type CdCr2Se4 monocrystals doped with 3, 7 and 10 mol% In have been investigated by electrical measurements at 77 K in an electric circuit comprising a linear resistor R1 and the CdCr2Se4:In sample. An electrical switching from the high conductive state to the low conductive state has been found. Switching of samples doped with 7 mol% In at R1 = 6 x 103 Ω is accompanied by a magnetic phase transition
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 80
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K149-K151
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 15038443
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM SELENIDES; CHROMIUM SELENIDES; CRYSTAL-PHASE TRANSFORMATIONS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; INDIUM COMPOUNDS; MAGNETIC FIELDS; MAGNETIC SEMICONDUCTORS; MONOCRYSTALS; SEMICONDUCTOR RESISTORS; SEMICONDUCTOR SWITCHES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CHROMIUM COMPOUNDS; CRYSTALS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; MATERIALS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RESISTORS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SWITCHES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- Short note.