Investigation of back gate interface states by drain current hysteresis in PD-SOI n-MOSFETs
Creators
- 1. Kumamoto National College of Technology, 2569-2 Nishigoshi, Kumamoto 861-1102 (Japan)
- 2. Institut de Microelectronica de Barcelona (CNM-CSIC) (Spain)
- 3. LSI/PSI/USP, University of Sao Paulo (Brazil)
- 4. IMEC (Belgium)
- 5. IMEC (Belgium) and KU Leuven (Belgium)
Description
The hysteresis characteristics of the drain current in PD-SOI n-MOSFETs are examined at different back gate voltages (VBG) and temperatures. The relationship between the hysteresis and the back gate interface states is also discussed. The ID hysteresis, which is defined as the difference of ID for VFG swept up and down, showed both positive (1st) and negative (2nd) peaks at VFG around 0.6 and 1.1V, respectively. The ID hysteresis depends on the back gate voltage. Both the 1st and 2nd peak heights of the ID hysteresis decrease with increasing temperature. This result indicates the lowering of the built-in potential of the source-body junction at high temperature. The activation energies for decreasing ID hysteresis are compared for different VBG conditions
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2005.12.107;
- PII
- S0921-4526(05)01495-X;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 376-377
- Journal Page Range
- p. 416-419
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 23. international conference on defects in semiconductors
- Dates
- 24-29 Jul 2005
- Place
- Awaji Island (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37073155
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ENERGY; ELECTRIC CURRENTS; GATING CIRCUITS; HYSTERESIS; INTERFACES; MOSFET; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CURRENTS; ELECTRONIC CIRCUITS; ENERGY; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.