Published 1973
| Version v1
Book
Mechanisms of defect production
Creators
- 1. State Univ. of New York Albany (USA). Dept. of Physics
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- London
- ISBN
- 0854981063
- Imprint Title
- Radiation damage and defects in semiconductors
- Imprint Pagination
- p. 1-16.
- Journal Issue
- no. 16
- Series
- Conference series.
Conference
- Title
- International conference on radiation damage and defects in semiconductors.
- Dates
- 19 Jul 1972.
- Place
- Reading, UK.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 4070911
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANIONS; CATIONS; CONFIGURATION; COULOMB FIELD; COVALENCE; DIAMONDS; DIFFUSION; FRENKEL DEFECTS; INTERATOMIC FORCES; INTERSTITIALS; ION PAIRS; IONIZATION; MATHEMATICAL MODELS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- CARBON; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC FIELDS; ELEMENTS; IONS; MINERALS; NONMETALS; POINT DEFECTS; SEMIMETALS; VACANCIES