Published April 2007 | Version v1
Journal article Metadata-only

Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging

Creators

  • 1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Description

Cathodoluminescence characteristics of modulation-doped transistor heterostructures AlGaAs/InGaAs/AlGaAs with the width of quantum well ∼12 nm are investigated in this work. The investigation was conducted by means of cathodoluminescence generation depth changing; the depth depends on electron energy. This fact allows us to obtain cathodoluminescence characteristics from different depth of the investigated structure. The influence of γ-radiation with several doses on the cathodoluminescence spectra was examined

Additional details

Identifiers

DOI
10.1134/S1063782607040227;

Publishing Information

Journal Title
Semiconductors
Journal Volume
41
Journal Issue
4
Journal Page Range
p. 473-477
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39098148
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM ARSENIDES; CARRIER DENSITY; CATHODOLUMINESCENCE; DOPED MATERIALS; GALLIUM ARSENIDES; GAMMA RADIATION; INDIUM ARSENIDES; QUANTUM WELLS; RADIATION DOSES; SPECTRA; TRANSISTORS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DOSES; ELECTROMAGNETIC RADIATION; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; IONIZING RADIATIONS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES

Optional Information

Copyright
Copyright (c) 2007 Pleiades Publishing, Ltd.