A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy

A mid-IR laser based on a hybrid pseudomorphic AlGaAsSb/InAs/CdMgSe heterostructure with a III-V/II-VI heterovalent interface at the 0.6-μm-InAs active region has been fabricated by molecular-beam epitaxy on p+-InAs substrate. It provides ∼1.5-eV asymmetric barriers for both electrons and holes in InAs, inhibiting carrier leakage from the active region. Despite a nonoptimal defect density at the CdMgSe/InAs interface (106-107 cm-2), the structure demonstrates lasing at ∼2.78 μm (up to 100 K) under pulse injection pumping with the threshold current density of 3-4 kA/cm2. The proposed design is promising for high-power mid-IR lasers operating at room temperature