Published August 1984
| Version v1
Journal article
SIMS system for the analysis of sputtered ions during ion implantation
- 1. Technische Universitaet Berlin (Germany, F.R.). Institut fuer Festkoerperphysik
Description
A system is described which allows secondary ion mass spectroscopy (SIMS) measurements during implantation at primary energies up to 170 keV. The secondary ions are produced by the implantation beam itself. The system has been assembled to study the stoichiometric disturbances near the surface of compound semiconductors caused by the bombardment with ions. Furthermore it is possible to examine the influence of sputter effects during implantation on the doping profile. The arrangement also provides means for standard SIMS and Auger electron spectroscopy (AES). (Auth.)
Additional details
Publishing Information
- Journal Title
- Mater. Lett.
- Journal Volume
- 2
- Journal Issue
- 5B
- Series
- Mater. Lett.
- Journal Page Range
- 458-461
- ISSN
- 0167-577X
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 16007929
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CATIONS; ION BEAMS; ION EMISSION; ION IMPLANTATION; MASS SPECTROSCOPY; SECONDARY EMISSION; SELENIUM 80; SILVER IONS; SILVER 107; SPUTTERING; ZINC SELENIDES; ZINC 64
- Descriptors DEC
- ATOMIC IONS; BEAMS; CHALCOGENIDES; CHARGED PARTICLES; EMISSION; EVEN-EVEN NUCLEI; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; IONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; NUCLEI; ODD-EVEN NUCLEI; RADIOISOTOPES; SECONDS LIVING RADIOISOTOPES; SELENIDES; SELENIUM COMPOUNDS; SELENIUM ISOTOPES; SILVER ISOTOPES; SPECTROSCOPY; STABLE ISOTOPES; ZINC COMPOUNDS; ZINC ISOTOPES