Heat conductivity of irradiated GaP crystals and details of their thermal annealing

The results of measurement of the heat conductivity (H) of GaP samples are presented as a function of the dose of electron radiation with E=50 MeV and after an isochronous annealing. The data analysis brought us to an inference that at irradiation there arise intrinsic radiation defects (IRD) which are identified as antisite defects of the phosphorus. A possibility of formation of complexes between these IRD is assumed at both irradiation and annealing. It is supposed that the essential difference observed between the results of n- and p-type samples annealing H is due to different mobility of the radiation effects. It is fixed that the defects in crystals with iron impurities are thermally more stable than in crystals with zinc impurities. 4 figs.; 19 refs. (author)