The hardness of silicon and germanium
- 1. Gordon Laboratory, Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)
Description
It is generally accepted that the hardness of silicon and germanium at low temperature is limited by a phase transformation under the indenter, as the measured hardness is equal to the transformation pressure. However, observations of the deformation under indents using transmission electron microscopy indicate that, in addition to the phase transformation, there is also plastic flow both in the transformed region and outside it. An analysis based on the spherical cavity model for indentation was developed to quantify the effect of a phase transformation on the measured hardness. This predicts that plastic deformation will extend beyond the transformed zone when the transformation pressure is greater than two-thirds of the yield stress. The analysis also predicts that the hardness can only be approximately equal to the transformation pressure if the yield strength of the transformed material is low, consistent with the experimental observations of substantial plastic deformation of the transformed phase, as well as with estimates of its lattice resistance
Availability note (English)
Available from http://dx.doi.org/10.1016/j.actamat.2007.07.036Additional details
Identifiers
- DOI
- 10.1016/j.actamat.2007.07.036;
- PII
- S1359-6454(07)00513-7;
Publishing Information
- Journal Title
- Acta Materialia
- Journal Volume
- 55
- Journal Issue
- 18
- Journal Page Range
- p. 6307-6315
- ISSN
- 1359-6454
- CODEN
- ACMAFD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39047805
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- GERMANIUM; HARDNESS; PHASE TRANSFORMATIONS; PLASTICITY; SILICON; STRESSES; TRANSMISSION ELECTRON MICROSCOPY; YIELD STRENGTH
- Descriptors DEC
- ELECTRON MICROSCOPY; ELEMENTS; MECHANICAL PROPERTIES; METALS; MICROSCOPY; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.