Published August 30, 2008 | Version v1
Journal article

The microstructure of Cu(In,Ga)S2 solar cell absorber films prepared using three-stage and two-stage evaporation

  • 1. Department of Electronics and Informatics, Ryukoku University, Seta, Otsu, 520-2194 (Japan)
  • 2. Department of Materials Chemistry, Ryukoku University, Seta, Otsu, 520-2194 (Japan)
  • 3. Hahn-Meitner Institut, Abteilung SE2, Glienickerstr.100, D 14109 Berlin (Germany)

Description

The microstructure of three-stage Cu-poor Cu(In,Ga)S2 solar cell absorbers has been compared with that of two-stage Cu-rich absorbers using high-resolution Transmission Electron Microscopy. It was found that the grains from three-stage evaporation have more stacking faults, and most of the grain boundaries are irregular, such as sawtooth shaped. The grains from two-stage evaporation have less defects, and the grain boundaries are straight. The difference of growth mechanisms between three-stage and two-stage evaporation are discussed and compared to the case of Cu(In,Ga)Se2

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2007.12.073

Additional details

Identifiers

DOI
10.1016/j.tsf.2007.12.073;
PII
S0040-6090(07)02126-8;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
516
Journal Issue
20
Journal Page Range
p. 7046-7050
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
EMRS 2007 conference on advanced materials and concepts for photovoltaics
Dates
28 May - 1 Jun 2007
Place
Strasbourg (France)

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.