Published February 1, 2013 | Version v1
Journal article

Compensation mechanisms at high temperature in Y-doped BaTiO3

  • 1. Department of Metallurgical and Materials Engineering, ESIQIE National Polytechnic Institute, U.P.A. Lopez Mateos, Zacatenco, Mexico City 07738 (Mexico)
  • 2. Department of Electrical Engineering, SEPI-ESIME National Polytechnic Institute, U.P.A. Lopez Mateos, Zacatenco, Mexico City 07738 (Mexico)

Description

Samples of BaTiO3 with different concentrations of Y were synthesized from powders. The mixtures of powders were pressed and sintered at 1500 °C for 1 h. Two groups of samples were processed, one satisfying Ba/(Ti+Y)<1 and the other satisfying Ba/(Ti+Y)=1. X-ray diffraction patterns were analyzed by Rietveld refinement and it was concluded that Y3+ occupies the Ti4+ lattice sites. The conductivity behavior as a function of Y concentration suggests that the compensation mechanisms are hole and oxygen vacancies. Due to the presence of charge carriers in the material, high values for the dielectric constant and dielectric loss were observed. Analysis of the microstructure showed that the average grain size decreases as the Y concentration is increased.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2012.11.001

Additional details

Identifiers

DOI
10.1016/j.physb.2012.11.001;
PII
S0921-4526(12)00973-8;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
410
Journal Issue
Complete
Journal Page Range
p. 157-161
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.