Published October 27, 2014
| Version v1
Journal article
Low temperature growth of the epitaxial Ge layers on Si(100) by Hot Wire Chemical Vapor Deposition
Creators
- 1. Physico-Technical Research Institute, Nizhniy Novgorod State University, Nizhniy Novgorod, 23/3 Gagarin Ave., Nizhny Novgorod 603950 (Russian Federation)
- 2. Physics Department, Nizhniy Novgorod State University, Nizhniy Novgorod, 23/3 Gagarin Ave., Nizhny Novgorod 603950 (Russian Federation)
Description
In the present paper, we report on the growing of thick (∼0.2-3.0 μm) epitaxial Ge/ Si(100) layers by Hot Wire Chemical Vapor Deposition (HWCVD) at low growth temperatures (350°C). The single crystal epitaxial Ge layers with low threading dislocation density (∼105 cm−2) and surface roughness (< 0.5 nm) have been obtained
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/541/1/012026Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 541
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1742-6596
Conference
- Title
- 1. international school and conference on optoelectronics, photonics, engineering and nanostructures
- Acronym
- OPEN 2014
- Dates
- 25-27 Mar 2014
- Place
- St Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46082511
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DENSITY; DISLOCATIONS; EPITAXY; GERMANIUM; LAYERS; MONOCRYSTALS; ROUGHNESS; SILICON; SURFACES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHEMICAL COATING; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CRYSTALS; DEPOSITION; ELEMENTS; LINE DEFECTS; METALS; PHYSICAL PROPERTIES; SEMIMETALS; SURFACE COATING; SURFACE PROPERTIES