Memory effect and electrical hysteresis in CdS nanorods embedded polymer thin films

Herein, we report the memory characteristics and hysteresis behavior of the cadmium sulphide (CdS) embedded poly-methyl methacrylate (PMMA) thin films in a sandwich cell configuration. The devices were fabricated by depositing different concentrations of CdS-PMMA nanocomposites onto indium tin oxide (ITO) coated glass substrates by spin coating technique. Aluminum (Al) was deposited through thermal evaporation technique and was used as top electrode. Structural analysis of the synthesized CdS were performed by using X-ray diffraction (XRD) and field emission scanning electron microscopy (Fe-SEM). UV-Visible absorption spectroscopy and photoluminescence (PL) spectroscopy were performed for optical analysis and optical energy gap was estimated. The current-voltage characteristics of the fabricated devices were studied which displays anti clockwise hysteresis behavior. The area within the hysteresis loop increases with increasing the concentration of CdS within the PMMA thin films. (paper)