Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer
- 1. Department of Physics, Korea University, Seoul 136-713 (Korea, Republic of)
- 2. Center for Spintronics, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
- 3. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701 (Korea, Republic of)
- 4. Department of Nanomaterials Science and Engineering, Korea University of Science and Technology, Daejeon 305-350 (Korea, Republic of)
Description
We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs
Additional details
Identifiers
- DOI
- 10.1063/1.4930833;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 107
- Journal Issue
- 10
- Journal Page Range
- p. 102407-102407.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47052024
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CRYSTALS; DIFFUSION LENGTH; DOPED MATERIALS; GALLIUM ARSENIDES; INTERFACES; MAGNESIUM OXIDES; MODULATION; MOLECULAR BEAM EPITAXY; SPIN
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DIMENSIONS; EPITAXY; GALLIUM COMPOUNDS; LENGTH; MAGNESIUM COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PNICTIDES
Optional Information
- Notes
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