Published 1989
| Version v1
Journal article
Identification of interstitial copper and its pair with substitutional copper in germanium
Description
We have discovered new copper-related hole traps, H2(0.09) and H3(0.23) in quenched germanium other than substitutional copper (Cus). Annealing around 250oC caused simultaneous annihilation of H2 and H3 with a correlated increase in Cus density. Annealing kinetics are analyzed by the reaction scheme, H2 ↔ Cus + H3, and H3 → sink, yielding 0.35 eV for the migration energy of H3. For this result and the donor character of H3, we have identified H3 and H2 as the interstitial copper (Cui) and the Cui-Cus pair, respectively. (author) 13 refs., 3 figs
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 38-41
- Series
- Mater. Sci. Forum.
- Journal Page Range
- 537-541
- ISSN
- 0255-5476
- CODEN
- MSFOE
Conference
- Title
- 15. International conference on defects in semiconductors (ICDS-15).
- Dates
- 22-26 Aug 1988.
- Place
- Budapest (Hungary).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 20062103
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ANNIHILATION; COPPER; CRYSTAL DEFECTS; CRYSTAL DOPING; GERMANIUM; INTERSTITIALS; QUENCHING
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; INTERACTIONS; METALS; PARTICLE INTERACTIONS; POINT DEFECTS; TRANSITION ELEMENTS