Quantitative determining impurity content in oxygen-containing matrices by secondary ion mass spectrometry

The results of the systematic study are presented on the sputtering and secondary ion emission of the the timn dielectric layers SiO2, Al2O3, GeO2, Si3N4, GeS doped with different impurities. The sputtering rate, secondary ion spectra (Si+, Al+, Ge+ and impurity ions Na+, K+, B+, P++ As+) the dielectric potential and its change during sputtering were measured under irradiation of samples with 0.6-2 keV argon ions. The results obtained are compared with the ionization probability for different elements calculated earlier. The validity of the ''plasma'' layer theory is confirmed