Comparative studies of laser-induced damage of several single-layer optical films
- 1. Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
- 2. Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900 (China)
Description
Single-layer optical films, ZrO2, SiO2 and HfO2, were deposited on K9 glass substrates by ion beam sputtering deposit technique in order to study laser-induced damage threshold (LIDT) and damage mechanism. Impurities and defects will result in strong weak absorption coefficient and photothermal signal. Further LIDT is inverse proportional to the absorption coefficient of the films. AFM images of as-deposited films showed a similar roughness of 2-4 nm. Among the films, ZrO2 film has a pore structure, which results in the largest weak absorption, photothermal effect and smallest LIDT. HfO2 film has the largest LIDT (22.13 J/cm2) due to the smallest number and size of both defects and impurities on the surface. Different films have different damage morphology, which is related to the morphology of defects or impurities in the film before laser irradiation and the interface between films and substrates. In order to enhance LIDT, it is important to prepare high-quality film and passivate the defects in the films
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2008.03.178Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2008.03.178;
- PII
- S0168-583X(08)00475-8;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 266
- Journal Issue
- 12-13
- Journal Page Range
- p. 3195-3199
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 14. international conference on radiation effects in insulators
- Acronym
- REI-14
- Dates
- 28 Aug - 1 Sep 2007
- Place
- Caen (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40011935
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; HAFNIUM OXIDES; IMPURITIES; LASER RADIATION; LASERS; LAYERS; MORPHOLOGY; PORE STRUCTURE; ROUGHNESS; SIGNALS; SILICON OXIDES; SPUTTERING; SURFACES; THIN FILMS; ZIRCONIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTROMAGNETIC RADIATION; FILMS; HAFNIUM COMPOUNDS; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; SORPTION; SURFACE PROPERTIES; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.