Published June 2008 | Version v1
Journal article

Comparative studies of laser-induced damage of several single-layer optical films

  • 1. Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
  • 2. Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900 (China)

Description

Single-layer optical films, ZrO2, SiO2 and HfO2, were deposited on K9 glass substrates by ion beam sputtering deposit technique in order to study laser-induced damage threshold (LIDT) and damage mechanism. Impurities and defects will result in strong weak absorption coefficient and photothermal signal. Further LIDT is inverse proportional to the absorption coefficient of the films. AFM images of as-deposited films showed a similar roughness of 2-4 nm. Among the films, ZrO2 film has a pore structure, which results in the largest weak absorption, photothermal effect and smallest LIDT. HfO2 film has the largest LIDT (22.13 J/cm2) due to the smallest number and size of both defects and impurities on the surface. Different films have different damage morphology, which is related to the morphology of defects or impurities in the film before laser irradiation and the interface between films and substrates. In order to enhance LIDT, it is important to prepare high-quality film and passivate the defects in the films

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2008.03.178

Additional details

Identifiers

DOI
10.1016/j.nimb.2008.03.178;
PII
S0168-583X(08)00475-8;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
266
Journal Issue
12-13
Journal Page Range
p. 3195-3199
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
14. international conference on radiation effects in insulators
Acronym
REI-14
Dates
28 Aug - 1 Sep 2007
Place
Caen (France)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40011935
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION; HAFNIUM OXIDES; IMPURITIES; LASER RADIATION; LASERS; LAYERS; MORPHOLOGY; PORE STRUCTURE; ROUGHNESS; SIGNALS; SILICON OXIDES; SPUTTERING; SURFACES; THIN FILMS; ZIRCONIUM OXIDES
Descriptors DEC
CHALCOGENIDES; ELECTROMAGNETIC RADIATION; FILMS; HAFNIUM COMPOUNDS; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; SORPTION; SURFACE PROPERTIES; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.