Published November 15, 1975
| Version v1
Journal article
Defects in irradiated silicon: EPR of the tin-vacancy pair
Description
An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with S = 1. Results of studies on wavelength of illumination indicate that it has a donor level at approximately E/sub v/ + 0.35 eV. Analysis of the EPR spectrum leads to a model in which the tin atom resides in a position halfway between two normal silicon atom sites (D/sub 3d/). It is stable to approximately 5000K
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 12
- Journal Issue
- 10
- Series
- Phys. Rev., B.
- Journal Page Range
- 4383-4390
- ISSN
- 0556-2805
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 7248310
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL LATTICES; DEFECTS; ELECTRON BEAMS; ELECTRON SPIN RESONANCE; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; SILICON; STABILITY; TIN ADDITIONS; VACANCIES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; LEPTON BEAMS; MAGNETIC RESONANCE; MEV RANGE; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; RESONANCE; SEMIMETALS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent