Inward Pinch of High-Z Impurity due to Atomic Processes in a Rotating Tokamak Plasma and the Effect of Radial Electric Field
- 1. Japan Atomic Energy Agency, Naka, Ibaraki (Japan)
- 2. Keio University, Yokohama, Kanagawa (Japan)
Description
Full text: The transport of high-Z impurity in a toroidally rotating tokamak plasma is investigated numerically and analytically. It is found that the inward pinch is driven by the atomic processes of ionization/recombination both in co- and ctr- rotating plasmas. This inward pinch is enhanced by the radial electric field. It is also found that the negative and positive radial electric fields cause the inward pinch and the outward movement (unpinch) of the high-Z impurity, respectively, under the influence of Coulomb collisions with the rotating background plasma. The pinch and the unpinch due to the radial electric field are as large as the inward pinch due to atomic processes in the case of large radial electric field. Therefore, the inward pinch due to atomic processes and the unpinch due to the radial electric field can be suppressed by each other in the co-rotation case, while the large inward pinch occurs in the ctr-rotation case. (author)
Additional details
Publishing Information
- Imprint Title
- 23. IAEA Fusion Energy Conference. Book of Abstracts
- Imprint Pagination
- 637 p.
- Journal Page Range
- p. 285-286
- Report number
- IAEA-CN--180
Conference
- Title
- 23. IAEA Fusion Energy Conference
- Acronym
- FEC 2010
- Dates
- 11-16 Oct 2010
- Place
- Daejeon (Korea, Republic of)
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43040994
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC FIELDS; IONIZATION; PLASMA IMPURITIES; RECOMBINATION; ROTATING PLASMA; TOKAMAK DEVICES
- Descriptors DEC
- CLOSED PLASMA DEVICES; IMPURITIES; PLASMA; THERMONUCLEAR DEVICES
Optional Information
- Secondary number(s)
- THC--P4-12