Published August 1, 2012 | Version v1
Journal article

Interfacial layer formation at ZnO/CdS interface

  • 1. Ritsumeikan Global Innovation Research Organization (R-GIRO), Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)
  • 2. Department of Electrical and Electronic Engineering, Tokyo City University, 1-28-1 Tamazutumi, Setagaya-ku, Tokyo 158-8557 (Japan)
  • 3. The SR center, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)
  • 4. College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)
  • 5. SR Center, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)

Description

We investigated the chemical bonding states at the ZnO/CdS interface by X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine structure (XAFS) measurements. We found that the octahedral ZnO6 species formed in the initial stage of the ZnO deposition from the Zn L3-edge X-ray absorption near-edge structure spectra. On the other hand, it is difficult to discuss the change of the chemical bonding states of the Zn atoms through the Zn 2p3/2 and the S 2p photoelectron spectra. In addition, we suggested that CdSO4 formed at the ZnO/CdS interface from the analysis of the O 1s photoelectron spectra. We enabled the significant investigation of the chemical bonding states at the ZnO/CdS interface by using a combination of XPS and XAFS measurements.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2012.04.177

Additional details

Identifiers

DOI
10.1016/j.apsusc.2012.04.177;
PII
S0169-4332(12)00844-6;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
258
Journal Issue
20
Journal Page Range
p. 8090-8093
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.