Published February 15, 2006
| Version v1
Journal article
Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMT'S
- 1. Laboratoire de Physique des Semiconducteurs et des Composants Electroniques (LA-MA-06), Faculte des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir (Tunisia)
- 2. Laboratoire de Microelectronique et Instrumentation (UR 03/13-04), Faculte des Sciences de Monastir, Avenue de l'Environnement 5000 Monastir (Tunisia)
- 3. Institut Preparatoire aux Etudes d'Ingenieurs de Nabeul (IPEIN), Campus Universitaire El Merazka, 8000 Nabeul (Tunisia)
- 4. Laboratoire de Physique de la Matiere (UMR CNRS 5511), INSA de Lyon, Bat. 502, 20 Avenue Albert Einstein, 69621 Villeurbanne Cedex (France)
Description
It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the wide band gap devices. In this paper, we present a detailed study of drain Current Deep Level Transient Spectroscopy CDLTS measurements performed on InAlAs/InGaAs/InP HEMT of two different samples. We demonstrate that a remarkable correlation exists between deep levels observed by CDLTS and the presence of parasitic effects such as kink and hysteresis effects
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2005.09.047;
- PII
- S0921-5107(05)00635-5;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 127
- Journal Issue
- 1
- Journal Page Range
- p. 34-40
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37120775
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; CORRELATIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; HYSTERESIS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MICROWAVE RADIATION; PERFORMANCE; SEMICONDUCTOR MATERIALS; TRAPPING
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SPECTROSCOPY; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.